High-performance InP/InGaAs heterojunction bipolar phototransistors for optoelectronic applications

نویسندگان

چکیده

<span>Phototransistors are attractive devices for applications in optical fiber telecommunication systems. They used the detection of signals and amplification these signals. This paper presents an investigation how technological parameters indium phosphide (InP)/indium gallium arsenide (InGaAs) heterojunction bipolar phototransistor can impact its responsivity at two wavelengths, 1310 nm 1550 nm. Based on results this investigation, we proposed optimized structures studied phototransistor. In work, software technology computer aided-design (TCAD)-Silvaco to simulate physical electrical behavior different structures. The phototransistors be various optoelectronic applications.</span>

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ژورنال

عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science

سال: 2023

ISSN: ['2502-4752', '2502-4760']

DOI: https://doi.org/10.11591/ijeecs.v32.i1.pp80-89